RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80 (RIE-FLUORINE)

RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80
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Guarantor: Marek Eliáš, Ph.D.
Technology / Methodology: Etching & Deposition
Instrument status: Operational Operational, 25.3.2025 15:09
Equipment placement: CEITEC Nano - C1.34
Research group: CF: CEITEC Nano
Upcoming trainings: 3.4. 10:00 - 12:00: RIE-flourine-training -


Description:

Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.
A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber. The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range between a few millitorrs and a few hundred millitorrs by adjusting gas flow rates and/or adjusting an exhaust orifice.


Publications:

  • MIGLIACCIO, L.; SAY, M.; PATHAK, G.; GABLECH, I.; BRODSKÝ, J.; DONAHUE, M.; GLOWACKI, E., 2025: Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte-Gated Transistors for Bioelectronics. ADVANCED MATERIALS TECHNOLOGIES , p. 2302219 - 9, doi: 10.1002/admt.202302219; FULL TEXT
    (SUSS-MA8, RIE-FLUORINE, PARYLENE-DIENER, KEITHLEY-4200)
  • Singh, A.; Němec, H.; Kunc, J.; Kužel, P., 2024: Nanoscale terahertz conductivity and ultrafast dynamics of terahertz plasmons in periodic arrays of epitaxial graphene nanoribbons. PHYSICAL REVIEW RESEARCH 6(3), doi: 10.1103/PhysRevResearch.6.033063; FULL TEXT
    (RAITH, RIE-FLUORINE)
  • Kunc, J.; Fridrišek, T.; Shestopalov, M.; Jo, J.; Park, K., 2024: Graphene–insulator–metal diodes: Enhanced dielectric strength of the Al2O3 barrier. AIP ADVANCES 14(9), p. 1 - 9, doi: 10.1063/5.0223763; FULL TEXT
    (RAITH, RIE-FLUORINE, ALD, EVAPORATOR, WIRE-BONDER, KRATOS-XPS)
  • Krčma, J., 2024: Controlled Excitation of Magnons through Optically Induced Mie Resonances in Periodic Dielectric Nanostructures. BACHELOR´S THESIS ; FULL TEXT
    (EVAPORATOR, RAITH, RIE-FLUORINE, KAUFMAN, BRILLOUIN, VERIOS)
  • JAKEŠOVÁ, M.; KUNOVSKÝ, O.; GABLECH, I.; KHODAGHOLY, D.; GELINAS, J.; GLOWACKI, E., 2024: Coupling of photovoltaics with neurostimulation electrodes-optical to electrolytic transduction. JOURNAL OF NEURAL ENGINEERING 21(4), doi: 10.1088/1741-2552/ad593d; FULL TEXT
    (PARYLENE-SCS, MAGNETRON, SUSS-MA8, EVAPORATOR, RIE-FLUORINE, DIENER, WIRE-BONDER)

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