Deep reactive ion etching of Si-based materials Oxford Instruments Plasma Technology PlasmaPro 100 (DRIE)

Guarantor:
Marek Eliáš, Ph.D.
Technology / Methodology:
Etching & Deposition
Instrument status:
Operational, 13.3.2025 17:02
Equipment placement:
CEITEC Nano - C1.34
Research group:
CF: CEITEC Nano
Description:
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes, and trenches in wafers/substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon via´s (TSV)´s in advanced 3D wafer-level packaging technology.
There are two main technologies for high-rate DRIE: cryogenic and Bosch, although the Bosch process is the only recognized production technique. Both Bosch and cryo processes can fabricate 90° (truly vertical) walls, but often the walls are slightly tapered, e.g. 88° („reentrant“) or 92° („retrograde“).
Another mechanism is sidewall passivation: SiOxFy functional groups (which originate from sulfur hexafluoride and oxygen etch gases) condense on the sidewalls and protect them from lateral etching. As a combination of these processes deep vertical structures can be made.
Publications:
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Liu, X.; Fohlerová, Z.; Gablech, I.; Pumera, M.; Neužil, P., 2024: Nature-inspired parylene/SiO2 core-shell micro-nano pillars: Effect of topography and surface chemistry. APPLIED MATERIALS TODAY 37, doi: 10.1016/j.apmt.2024.102117; FULL TEXT
(RIE-FLUORINE, DRIE, PARYLENE-SCS, XEF2) -
CHMELÍKOVÁ, L.; FECKO, P.; CHMELÍK, J.; SKÁCEL, J.; OTÁHAL, A.; FOHLEROVÁ, Z., 2023: Demolded hollow high aspect-ratio parylene-C micropillars for real-time mechanosensing applications. APPLIED MATERIALS TODAY , p. 1 - 12, doi: 10.1016/j.apmt.2023.101736; FULL TEXT
(DRIE, PARYLENE-SCS, SUSS-MA8, XEF2) -
Mahel, V., 2023: Variable MEMS aperture for electron microscopy. MASTER´S THESIS ; FULL TEXT
(DWL, DRIE, DEKTAK, DIENER, WIRE-BONDER) -
GABLECH, I.; BRODSKÝ, J.; VYROUBAL, P.; PIASTEK, J.; BARTOŠÍK, M.; PEKÁREK, J., 2022: Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers. JOURNAL OF MATERIALS SCIENCE 57(3), p. 1923 - 13, doi: 10.1007/s10853-021-06846-6; FULL TEXT
(RIE-FLUORINE, DRIE, EVAPORATOR, WIRE-BONDER, WITEC-RAMAN, MPS150, KEITHLEY-4200, SUSS-MA8, DWL) -
Ondříšková, M., 2022: Analysis and characterisation of spirally–arranged field–emission nanostructure. BACHELOR´S THESIS , p. 1 - 56; FULL TEXT
(VERIOS, DRIE, KRATOS-XPS)