JOURNAL OF CRYSTAL GROWTH
Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
VANĚK, T., HÁJEK, F., DOMINEC, F., HUBÁČEK, T., KULDOVÁ, K., PANGRÁC, J., KOŠUTOVÁ, T., KEJZLAR, P., BÁBOR, P., LACHOWSKI, A., HOSPODKOVÁ, A.
doi: 10.1016/j.jcrysgro.2021.126151